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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, T J 150C, RG = 2 W TC = 25C Maximum Ratings 300 300 20 30 40 160 40 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C g Features G = Gate, S = Source, D = Drain, TAB = Drain G D S e (TAB) * Low profile, high power package * Long creep and strike distances * Easy up-grade path for TO-220 * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) * Low package inductance * Fast intrinsic Rectifier Applications - easy to drive and to protect rated designs 1.6 mm (0.062 in.) from case for 10 s 300 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 100 TJ = 25C TJ = 125C 200 1 V V nA mA mA * * * * * * * * * * * VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages High power, low profile package Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % 80 mW IXYS reserves the right to change limits, test conditions, and dimensions. 98536 1/99) (c) 2000 IXYS All rights reserved 1-2 IXFJ 40N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 25 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 745 280 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 W (External) 60 75 45 177 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 78 30 90 100 90 200 50 105 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. TO-268 Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) Inches Min Max .193 .201 .106 .114 .045 .075 .016 .057 .543 .488 .057 .083 .026 .063 .551 .500 Millimeters Min Max 4.90 5.10 2.70 2.90 1.15 1.90 .040 1.45 13.80 12.40 1.45 2.10 .065 1.60 14.00 12.70 A A1 b b2 C C2 D D1 E E1 e H L L1 L2 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 160 1.5 200 350 A A V ns ns .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 1.395 .800 .091 .045 15.85 16.05 13.30 13.60 5.45 BSC 34.67 19.81 2.00 1.00 35.43 20.32 2.30 1.15 IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C characteristic curves are located in the IXFH 40N30 data sheet. (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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